PSMN1R8-30PL,127

Name: PSMN1R8-30PL,127
Brand: NXP Semiconductors

模拟与电源

NEXPERIA PSMN1R8-30PL - 100A, 30

在产TO-220-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.8mOhm @ 25A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	10180 pF @ 12 V
制造商	NXP Semiconductors
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.15V @ 1mA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
最大功耗	270W (Tc)

工作温度	-55°C~175°C(TJ)