通用
| 制造商 | NTE Electronics, Inc |
|---|---|
| 安装类型 | Through Hole |
| 包装 | Bag |
| 产品状态 | 在产 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 50mA |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 制造商 | NTE Electronics, Inc |
|---|---|
| 安装类型 | Through Hole |
| 包装 | Bag |
| 产品状态 | 在产 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
|---|---|
| Current - Collector (Ic) (Max) | 200 mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 10mA, 5V |
| Power - Max | 625 mW |
| Frequency - Transition | 160MHz |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
|---|---|
| 供应商器件封装 | TO-92 |
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|