通用
| 输出配置 | Phototransistor |
|---|---|
| 制造商 | NTE Electronics, Inc |
| 安装类型 | Through Hole |
| Product Status | Active |
| Response Time | 45µs, 250µs |
| Sensing Distance | 0.118" (3mm) |
| Sensing Method | Through-Beam |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 1 V |
|---|---|
| Current - Collector (Ic) (Max) | 100 mA |
| Current - DC Forward (If) (Max) | 60 mA |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | PCB Mount |
环境
| 工作温度 | -55°C~100°C |
|---|