通用
| 制造商 | NTE Electronics, Inc |
|---|---|
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 4A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
| Power - Max | 1 W |
| Frequency - Transition | 130MHz |
机械
| 封装 | Bag |
|---|---|
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| 供应商器件封装 | TO-251 |
环境
| 工作温度 | 150°C (TJ) |
|---|