NTE2369

NTE Electronics, Inc

NTE2369

Datasheet

模拟与电源

TRANS PREBIAS NPN 50V TO92S

在产TO-226-3, TO-92-3 Short Body模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号NTE23
制造商NTE Electronics, Inc
安装类型Through Hole
Product StatusActive
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA

电气

Voltage - Collector Emitter Breakdown (Max)50 V
Current - Collector (Ic) (Max)100 mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Power - Max300 mW
Frequency - Transition250 MHz

机械

封装Bag
Package / CaseTO-226-3, TO-92-3 Short Body
供应商器件封装TO-92S