通用
| 制造商 | NTE Electronics, Inc |
|---|---|
| 安装类型 | Through Hole |
| 包装 | Bag |
| 产品状态 | 在产 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 30mA, 10V |
| Power - Max | 750 mW |
| Frequency - Transition | 80MHz |
机械
| Package / Case | 14-DIP (0.300", 7.62mm) |
|---|---|
| 供应商器件封装 | 14-DIP |
环境
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|