通用
| 制造商 | NTE Electronics, Inc |
|---|---|
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 30mA, 300mA |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 制造商 | NTE Electronics, Inc |
|---|---|
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 30mA, 300mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Power - Max | 650 mW |
| Frequency - Transition | 350MHz |
| 封装 | Bag |
|---|---|
| Package / Case | 14-DIP (0.300", 7.62mm) |
| 供应商器件封装 | 14-DIP |
| 工作温度 | -65°C ~ 200°C (TJ) |
|---|