BS170

NTE Electronics, Inc

BS170

Datasheet

模拟与电源

MOSFET N-CH 60V 300MA TO92-3

在产TO-226-3, TO-92-3 (TO-226AA) Formed Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs5Ohm @ 200mA, 10V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 10 V
制造商NTE Electronics, Inc
安装类型Through Hole
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 1mA

电气

漏源电压60 V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)

机械

封装Bag
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
供应商器件封装TO-92