通用
| 制造商 | NTE Electronics, Inc |
|---|---|
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 制造商 | NTE Electronics, Inc |
|---|---|
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
|---|---|
| Current - Collector (Ic) (Max) | 50 mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 100µA, 5V |
| Power - Max | 625 mW |
| Frequency - Transition | 50MHz |
| 封装 | Bag |
|---|---|
| Package / Case | TO-226-3, TO-92-3 Long Body |
| 供应商器件封装 | TO-92 (TO-226) |
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|