1N645

NTE Electronics, Inc

1N645

Datasheet

模拟与电源

DIODE GEN PURP 225V 400MA DO35

在产DO-204AH, DO-35, Axial模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Capacitance @ Vr, F15pF @ 4V, 1MHz
制造商NTE Electronics, Inc
安装类型Through Hole
Product StatusActive
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)225 V
Voltage - Forward (Vf) (Max) @ If1 V @ 400 mA
Current - Average Rectified (Io)400mA
Current - Reverse Leakage @ Vr200 nA @ 225 V
速度Standard Recovery >500ns, > 200mA (Io)

机械

封装Bag
Package / CaseDO-204AH, DO-35, Axial
供应商器件封装DO-35

环境

Operating Temperature - Junction-65°C ~ 175°C