PSMN6R3-120ESQ

Name: PSMN6R3-120ESQ
Brand: Nexperia USA Inc

模拟与电源

MOSFET N-CH 120V 70A I2PAK

停产/老旧TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	6.7mOhm @ 25A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	207.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	11384 pF @ 60 V
制造商	Nexperia USA Inc.
安装类型	Through Hole
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	120 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
最大功耗	405W (Tc)

工作温度	-55°C ~ 175°C (TJ)