PSMN6R1-25MLDX

Nexperia USA Inc

PSMN6R1-25MLDX

Datasheet

模拟与电源

MOSFET N-CH 25V 60A LFPAK33

在产SOT-1210, 8-LFPAK33 (5-Lead)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs7.24mOhm @ 15A, 10V
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds702 pF @ 12 V
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 1mA

电气

漏源电压25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
最大功耗42W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-1210, 8-LFPAK33 (5-Lead)
供应商器件封装LFPAK33

环境

工作温度-55°C ~ 175°C (TJ)