PSMN2R3-100SSEJ

Nexperia USA Inc

PSMN2R3-100SSEJ

Datasheet

模拟与电源

APPLICATION SPECIFIC POWER MOSFE

在产SOT-1235模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2.2mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds17200 pF @ 50 V
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

电气

漏源电压100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C255A (Ta)
最大功耗341W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-1235
供应商器件封装LFPAK88 (SOT1235)

环境

工作温度-55°C ~ 175°C (TJ)