PSMN1R5-30YL,115

Nexperia USA Inc

PSMN1R5-30YL,115

Datasheet

模拟与电源

MOSFET N-CH 30V 100A LFPAK56

已停产SC-100, SOT-669模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.5mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs77.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5057 pF @ 12 V
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.15V @ 1mA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
最大功耗109W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSC-100, SOT-669
供应商器件封装LFPAK56, Power-SO8

环境

工作温度-55°C ~ 175°C (TJ)