PSMN1R2-55SLHX

Nexperia USA Inc

PSMN1R2-55SLHX

Datasheet

模拟与电源

N-CHANNEL 55 V, 1.03 MOHM, 330 A

在产SOT-1235模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.03mOhm @ 25A, 10V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds25773 pF @ 27 V
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 1mA

电气

漏源电压55 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C330A (Ta)
最大功耗375W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-1235
供应商器件封装LFPAK88 (SOT1235)

环境

工作温度-55°C ~ 175°C (TJ)