PSMN165-200K,518

Name: PSMN165-200K,518
Brand: Nexperia USA Inc

模拟与电源

MOSFET N-CH 200V 2.9A 8SO

停产/老旧8-SOIC (0.154", 3.90mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	165mOhm @ 2.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1330 pF @ 25 V
制造商	Nexperia USA Inc.
安装类型	Surface Mount
Product Status	Obsolete
系列	TrenchMOS™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 1mA

漏源电压	200 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	2.9A (Tc)
最大功耗	3.5W (Tc)

工作温度	-55°C ~ 150°C (TJ)