PSMN059-150Y,115

Name: PSMN059-150Y,115
Brand: Nexperia USA Inc

模拟与电源

MOSFET N-CH 150V 43A LFPAK56

在产SC-100, SOT-669模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	59mOhm @ 12A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1529 pF @ 30 V
制造商	Nexperia USA Inc.
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 1mA

漏源电压	150 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	43A (Tc)
最大功耗	113W (Tc)

工作温度	-55°C~150°C(TJ)