PSMN011-60MLX

Nexperia USA Inc

PSMN011-60MLX

Datasheet

模拟与电源

MOSFET N-CH 60V 61A LFPAK33

在产SOT-1210, 8-LFPAK33 (5-Lead)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs11.3mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs37.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2191 pF @ 30 V
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.45V @ 1mA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C61A (Tc)
最大功耗91W (Tc)

机械

封装Tape & Reel (TR)
Package / CaseSOT-1210, 8-LFPAK33 (5-Lead)
供应商器件封装LFPAK33

环境

工作温度-55°C~175°C(TJ)