PNE200100EPE-QZ

Nexperia USA Inc

PNE200100EPE-QZ

Datasheet

模拟与电源

DIODE GEN PURP 200V 10A CFP15B

在产TO-277, 3-PowerDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Capacitance @ Vr, F99pF @ 4V, 1MHz
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)30 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If960 mV @ 10 A
Current - Average Rectified (Io)10A
Current - Reverse Leakage @ Vr1 µA @ 200 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-277, 3-PowerDFN
供应商器件封装CFP15B

环境

GradeAutomotive
Operating Temperature - Junction175°C
QualificationAEC-Q101