PMV65XP/MIR

Name: PMV65XP/MIR
Brand: Nexperia USA Inc

模拟与电源

MOSFET P-CH 20V 2.8A TO236AB

停产/老旧TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	74mOhm @ 2.8A, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	7.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	744 pF @ 20 V
制造商	Nexperia USA Inc.
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	900mV @ 250µA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C	2.8A (Ta)
最大功耗	480mW (Ta), 4.17W (Tc)

工作温度	-55°C~150°C(TJ)