PMV33UPE,215

Name: PMV33UPE,215
Brand: Nexperia USA Inc

模拟与电源

MOSFET P-CH 20V 4.4A TO236AB

在产TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	36mOhm @ 3A, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	22.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1820 pF @ 10 V
制造商	Nexperia USA Inc.
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	950mV @ 250µA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C	4.4A (Ta)
最大功耗	490mW (Ta)

工作温度	-55°C ~ 150°C (TJ)