PMDXB600UNEZ

Nexperia USA Inc

PMDXB600UNEZ

Datasheet

模拟与电源

MOSFET 2N-CH 20V 0.6A 6DFN

在产6-XFDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs620mOhm @ 600mA, 4.5V
基础料号PMDXB600
配置2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds21.3pF @ 10V
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusActive
系列TrenchFET®
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950mV @ 250µA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C600mA
Power - Max265mW

机械

封装Tape & Reel (TR) Cut Tape (CT) Cut Tape (CT)
Package / Case6-XFDFN Exposed Pad
供应商器件封装DFN1010B-6

环境

工作温度-55°C ~ 150°C (TJ)