PMDPB56XNEAX

Nexperia USA Inc

PMDPB56XNEAX

Datasheet

模拟与电源

MOSFET 2N-CH 30V 3.1A 6DFN

在产6-UDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs72mOhm @ 3.1A, 4.5V
配置2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds256pF @ 15V
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.25V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C3.1A (Ta)
Power - Max485mW (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-UDFN Exposed Pad
供应商器件封装DFN2020D-6

环境

GradeAutomotive
工作温度-55°C ~ 150°C (TJ)
QualificationAEC-Q100