PMCXB1000UEZ

Nexperia USA Inc

PMCXB1000UEZ

Datasheet

模拟与电源

MOSFET N/P-CH 30V 0.59A 6DFN

在产6-XFDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V
基础料号PMCXB1000
配置N and P-Channel Complementary
Gate Charge (Qg) (Max) @ Vgs1.05nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds30.3pF @ 15V, 43.2pF @ 15V
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950mV @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C590mA (Ta), 410mA (Ta)
Power - Max285mW (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-XFDFN Exposed Pad
供应商器件封装DFN1010B-6

环境

工作温度-55°C ~ 150°C (TJ)