PHK5NQ15T,518

Nexperia USA Inc

PHK5NQ15T,518

Datasheet

模拟与电源

MOSFET N-CH 150V 5A 8SO

停产/老旧8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs75mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 25 V
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusObsolete
系列TrenchMOS™
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

电气

漏源电压150 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
最大功耗6.25W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SO

环境

工作温度-55°C ~ 150°C (TJ)