PHK04P02T,518

Nexperia USA Inc

PHK04P02T,518

Datasheet

模拟与电源

MOSFET P-CH 16V 4.66A 8SO

停产/老旧8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs120mOhm @ 1A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds528 pF @ 12.8 V
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id600mV @ 1mA (Typ)

电气

漏源电压16 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.66A (Tc)
最大功耗5W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SO

环境

工作温度-55°C ~ 150°C (TJ)