PH3230S,115

Nexperia USA Inc

PH3230S,115

Datasheet

模拟与电源

MOSFET N-CH 30V 100A LFPAK

停产/老旧SC-100, SOT-669模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs3.2mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds4100 pF @ 10 V
制造商Nexperia USA Inc.
安装类型Surface Mount
包装Cut Tape (CT)
产品状态停产/老旧
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 1mA

电气

漏源电压30 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)

机械

Package / CaseSC-100, SOT-669
供应商器件封装LFPAK56, Power-SO8