PH2520U,115

Nexperia USA Inc

PH2520U,115

Datasheet

模拟与电源

MOSFET N-CH 20V 100A LFPAK56

在产SC-100, SOT-669模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2.7mOhm @ 25A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5850 pF @ 10 V
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950mV @ 1mA

电气

漏源电压20 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)

机械

封装Bulk
Package / CaseSC-100, SOT-669
供应商器件封装LFPAK56, Power-SO8