PH20100S,115

Nexperia USA Inc

PH20100S,115

Datasheet

模拟与电源

MOSFET N-CH 100V 34.3A LFPAK56

已停产SC-100, SOT-669模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs23mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2264 pF @ 25 V
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusDiscontinued at
系列TrenchMOS™
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

电气

漏源电压100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C34.3A (Tc)
最大功耗62.5W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSC-100, SOT-669
供应商器件封装LFPAK56, Power-SO8