GAN190-650FBEZ

Name: GAN190-650FBEZ
Brand: Nexperia USA Inc

模拟与电源

650 V, 190 MOHM GALLIUM NITRIDE

在产8-PowerVDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	190mOhm @ 3.9A, 6V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds	96 pF @ 400 V
制造商	Nexperia USA Inc.
安装类型	Surface Mount, Wettable Flank
Product Status	Active
技术	GaNFET (Gallium Nitride)
Vgs (Max)	+7V, -1.4V
Vgs(th) (Max) @ Id	2.5V @ 12.2mA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	6V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
最大功耗	125W (Ta)

工作温度	-55°C ~ 150°C (TJ)