BSH202,215

Name: BSH202,215
Brand: Nexperia USA Inc

模拟与电源

MOSFET P-CH 30V 520MA TO236AB

在产TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	900mOhm @ 280mA, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	80 pF @ 24 V
制造商	Nexperia USA Inc.
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	1.9V @ 1mA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	520mA (Ta)
最大功耗	417mW (Ta)

工作温度	-55°C~150°C(TJ)