BSH201,215

Nexperia USA Inc

BSH201,215

Datasheet

模拟与电源

MOSFET P-CH 60V 300MA TO236AB

已停产TO-236-3, SC-59, SOT-23-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2.5Ohm @ 160mA, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds70 pF @ 48 V
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1V @ 1mA (Min)

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
最大功耗417mW (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
供应商器件封装TO-236AB

环境

工作温度-55°C ~ 150°C (TJ)