BAS21LLYL

Nexperia USA Inc

BAS21LLYL

Datasheet

模拟与电源

DIODE GP 200V 330MA 2DFN

在产2-XDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号BAS21
Capacitance @ Vr, F2pF @ 0V, 1MHz
制造商Nexperia USA Inc.
安装类型Surface Mount, Wettable Flank
Product StatusActive
Reverse Recovery Time (trr)50 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If1.25 V @ 200 mA
Current - Average Rectified (Io)330mA
Current - Reverse Leakage @ Vr100 nA @ 200 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case2-XDFN
供应商器件封装DFN1006D-2

环境

GradeAutomotive
Operating Temperature - Junction150°C (Max)
QualificationAEC-Q101