2N7002PV,115

Nexperia USA Inc

2N7002PV,115

Datasheet

模拟与电源

MOSFET 2N-CH 60V 0.35A SOT666

已停产SOT-563, SOT-666模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.6Ohm @ 500mA, 10V
配置2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V
制造商Nexperia USA Inc.
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.4V @ 250µA

电气

漏源电压60V
Current - Continuous Drain (Id) @ 25°C350mA
Power - Max330mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
供应商器件封装SOT-666

环境

GradeAutomotive
工作温度150°C (TJ)
QualificationAEC-Q101