NP82N04NDG-S18-AY

Name: NP82N04NDG-S18-AY
Brand: NEC Corporation

模拟与电源

MOSFET N-CH 40V 82A 3LDPAK

停产/老旧TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4.2mOhm @ 41A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	9000 pF @ 25 V
制造商	NEC Corporation
安装类型	Through Hole
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	40 V
Current - Continuous Drain (Id) @ 25°C	82A (Tc)
最大功耗	1.8W (Ta), 143W (Tc)

封装	Tube
供应商器件封装	3-LDPAK