2SJ606-ZK-E1-AY

NEC Corporation

2SJ606-ZK-E1-AY

模拟与电源

P-CHANNEL SWITCHING POWER MOSFET

在产TO-263-3, D2PAK (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs15mOhm @ 42A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4800 pF @ 10 V
制造商NEC Corporation
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C83A
最大功耗120W

机械

封装Bulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
供应商器件封装TO-220SMD

环境

工作温度150°C (TJ)