通用
| Rds On (Max) @ Id, Vgs | 490mOhm @ 9.4A, 12V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 12 V |
| 制造商 | Microsemi Corporation |
| 安装类型 | Through Hole |
| 包装 | Tray |
| 产品状态 | 停产/老旧 |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| 漏源电压 | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
| 最大功耗 | 2W (Ta), 75W (Tc) |
机械
| 供应商器件封装 | TO-257 |
|---|
环境
| Grade | Military |
|---|---|
| 工作温度 | -55°C ~ 150°C (TJ) |
| Qualification | MIL-PRF-19500/614 |