通用
| Rds On (Max) @ Id, Vgs | 110mOhm @ 26A, 12V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 12 V |
| 制造商 | Microsemi Corporation |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 系列 | Military, MIL-PRF-19500/603 |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |