通用
| 基础料号 | 2N2221 |
|---|---|
| 制造商 | Microsemi Corporation |
| 安装类型 | Surface Mount |
| 包装 | Tray |
| 产品状态 | 在产 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 基础料号 | 2N2221 |
|---|---|
| 制造商 | Microsemi Corporation |
| 安装类型 | Surface Mount |
| 包装 | Tray |
| 产品状态 | 在产 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 800 mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Power - Max | 500 mW |
| Package / Case | 3-SMD, No Lead |
|---|---|
| 供应商器件封装 | UB |
| Grade | Military |
|---|---|
| 工作温度 | -65°C ~ 200°C (TJ) |
| Qualification | MIL-PRF-19500/255 |