通用
| 基础料号 | 2N6250 |
|---|---|
| 制造商 | Microsemi Corporation |
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.25A, 10A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 275 V |
|---|---|
| Current - Collector (Ic) (Max) | 10 A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 10A, 3V |
| Power - Max | 6 W |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | TO-254-3, TO-254AA (Straight Leads) |
| 供应商器件封装 | TO-254AA |
环境
| Grade | Military |
|---|---|
| 工作温度 | -65°C ~ 200°C (TJ) |
| Qualification | MIL-PRF-19500/510 |