通用
| Rds On (Max) @ Id, Vgs | 700mOhm @ 600mA, 10V |
|---|---|
| 配置 | 4 N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| 制造商 | Microsemi Corporation |
| 安装类型 | Through Hole |
| Product Status | Active |
| 技术 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| 漏源电压 | 100V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1A |
| Power - Max | 1.4W |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | 14-DIP (0.300", 7.62mm) |
| 供应商器件封装 | MO-036AB |
环境
| Grade | Military |
|---|---|
| 工作温度 | -55°C ~ 150°C (TJ) |
| Qualification | MIL-PRF-19500/597 |