APTM100A12STG

Microsemi Corporation

APTM100A12STG

模拟与电源

MOSFET 2N-CH 1000V 68A SP3

已停产SP3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs120mOhm @ 34A, 10V
基础料号APTM100
配置2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs616nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds17400pF @ 25V
制造商Microsemi Corporation
安装类型Chassis Mount
Product StatusDiscontinued at
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 10mA

电气

漏源电压1000V (1kV)
Current - Continuous Drain (Id) @ 25°C68A
Power - Max1250W

机械

封装Bulk
Package / CaseSP3
供应商器件封装SP3

环境

工作温度-40°C ~ 150°C (TJ)