通用
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.25A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 10 V |
| 制造商 | Microsemi Corporation |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| 漏源电压 | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| 最大功耗 | 800mW (Tc) |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | TO-205AF Metal Can |
| 供应商器件封装 | TO-39 |
环境
| 工作温度 | -55°C~150°C(TJ) |
|---|