通用
| Rds On (Max) @ Id, Vgs | 15Ohm @ 300mA, 10V |
|---|---|
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
| 制造商 | Microchip Technology |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Rds On (Max) @ Id, Vgs | 15Ohm @ 300mA, 10V |
|---|---|
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
| 制造商 | Microchip Technology |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| 漏源电压 | 400 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 180mA (Tj) |
| 最大功耗 | 1W (Ta) |
| 封装 | Bag |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| 供应商器件封装 | TO-92-3 |
| 工作温度 | -55°C~150°C(TJ) |
|---|