通用
| 基础料号 | MSCDC100 |
|---|---|
| Diode Configuration | 1 Pair Common Cathode |
| 制造商 | Microchip Technology |
| 安装类型 | Chassis Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| 技术 | SiC (Silicon Carbide) Schottky |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 基础料号 | MSCDC100 |
|---|---|
| Diode Configuration | 1 Pair Common Cathode |
| 制造商 | Microchip Technology |
| 安装类型 | Chassis Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| 技术 | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 700 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 100 A |
| Current - Average Rectified (Io) (per Diode) | 100A |
| Current - Reverse Leakage @ Vr | 400 µA @ 700 V |
| 速度 | No Recovery Time > 500mA (Io) |
| 封装 | Box |
|---|---|
| Package / Case | Module |
| 供应商器件封装 | D1P |
| Operating Temperature - Junction | -40°C ~ 175°C |
|---|