通用
| Rds On (Max) @ Id, Vgs | 940mOhm @ 2.5A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 1360 V |
| 制造商 | Microchip Technology |
| 安装类型 | Through Hole |
| Product Status | Active |
| 技术 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +23V, -10V |
| Vgs(th) (Max) @ Id | 3.25V @ 100µA (Typ) |