MSC080SMA330B4

Name: MSC080SMA330B4
Brand: Microchip Technology

模拟与电源

MOSFET SIC 3300 V 80 MOHM TO-247

在产TO-247-4模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	105mOhm @ 30A, 20V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	3462 pF @ 2400 V
制造商	Microchip Technology
安装类型	Through Hole
Product Status	Active
技术	SiCFET (Silicon Carbide)
Vgs (Max)	+23V, -10V
Vgs(th) (Max) @ Id	2.97V @ 3mA

漏源电压	3300 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	41A (Tc)
最大功耗	381W (Tc)

工作温度	-55°C ~ 150°C (TJ)