MSC080SMA120S

Name: MSC080SMA120S
Brand: Microchip Technology

模拟与电源

SICFET N-CH 1200V 35A D3PAK

在产TO-268-3, D³Pak (2 Leads + Tab), TO-268AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	100mOhm @ 15A, 20V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	838 pF @ 1000 V
制造商	Microchip Technology
安装类型	Surface Mount
Product Status	Active
技术	SiCFET (Silicon Carbide)
Vgs (Max)	+23V, -10V
Vgs(th) (Max) @ Id	2.8V @ 1mA

漏源电压	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	35A
最大功耗	182W (Tc)

工作温度	-55°C~175°C(TJ)