通用
| Rds On (Max) @ Id, Vgs | 44mOhm @ 30A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2010 pF @ 700 V |
| 制造商 | Microchip Technology |
| 安装类型 | Through Hole |
| 包装 | Tube |
| 产品状态 | 在产 |
| 技术 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 2.7V @ 2mA |