通用
| Rds On (Max) @ Id, Vgs | 22mOhm @ 40A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 249 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5280 pF @ 1000 V |
| 制造商 | Microchip Technology |
| 安装类型 | Through Hole |
| Product Status | Active |
| 技术 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +22V, -10V |
| Vgs(th) (Max) @ Id | 2.7V @ 4.5mA (Typ) |